Nitrogen doped graphene

Techniques used in Nitrogen Doped Graphene

Nitrogen doped graphene samples were characterized using XRD, Raman spectroscopy, and FTIR. These techniques provided information on the size of the crystallites, the number of layers, and any functionalities attached to the surface. In this article, we will describe some of the results from this research.

FTIR spectra

The nitrogen doping of graphene results in four characteristic peaks. The FWHM (Fourth-Wave Half-Maximum) of the peaks is 1056 cm-1. The peaks of NG-0.5, NG-1 and NG-2 are located at 1672, 2968, and 3670 cm-1, respectively. These peaks are similar to those of pure graphene. Nitrogen doping reduces the signal from the C-O functional group of graphene.

The nitrogen doping of graphene has important implications for energy-conversion applications. It can enhance the performance of various semiconductor devices. For example, nitrogen-doped graphene is better able to resist electrochemical processes, and it is also able to resist electrochemical reactions better than undoped graphene.

Nitrogen doping of graphene oxide requires nitrogen as a dopant and a reducing agent. N-doped graphene is a multifunctional nanocomponent material.

Nitrogen doped graphene is also electrocatalytic. The electrodes produced cyclic voltammograms at ten mV/s. These spectra show the capacitive current, which is the charge-storage capacity of graphene. The lower the doping level, the higher the capacitive current.

Electrocatalytic activity

Nitrogen doped graphene is an environmentally friendly material with excellent electrocatalytic activity. Its chemical properties are similar to those of Pt-based catalysts. The chemical structure of nitrogen-doped graphene is based on an interconnected 3D structure. The N-doped graphene has two active sites, one for the electron-withdrawing pyridinic nitrogen (N-6), the other for the electron-donating quaternary nitrogen (N-X).

The nitrogen content in the graphene is a key factor determining the catalytic activity. Nitrogen doping favors the reduction of oxygen to water at lower overpotentials.

Nitrogen doping has been achieved by using melamine as a nitrogen source. The N content is influenced by the pyrolysis temperature and gas flow rate. The quaternary N at the graphene edge is more active and could decrease the adsorption energy of OOH intermediates. If this is the case, then nitrogen doped graphene is a promising candidate for electrocatalysis.

The nitrogen doping process also modified the carbon ring charge distribution. This enhanced C1s binding energy and inhibited carbon corrosion during OER.

Dispersive ability

Nitrogen doped graphene has been shown to have high dispersive ability. This property enables it to facilitate the migration of hydrogen atoms onto the surface of the material. The dispersive ability of nitrogen doped graphener is size dependent and is dependent on the type of nitrogen inclusion.

Graphitic-N dopants exhibit sublattice segregation, whereby the nitrogen atoms prefer one of the two sublattices. The model of PG/NG consisted of a flake with 200 carbon atoms, with one nitrogen atom located in the center of the flake. We obtained the lowest energy conformation for five isolated molecules.

Nitrogen introduction causes sublattice segregation, which results in well-defined domains. However, the effects of nitrogen doping on graphene are not yet fully understood. However, N-doped graphene shows improved catalytic activity for oxygen reduction reactions in fuel cells.


Conductivity of wordpres development houston graphene is a hot topic for many applications, including energy storage. The reason for this is that nitrogen’s high electron-acceptance capabilities and electrochemical stability have drawn much attention. However, doping nitrogen in a carbon matrix introduces defects. In addition, the charge-delocalization process promotes reactions with the oxygen molecule.

Recent studies suggest that nitrogen doping can enhance the electronic conductivity of graphene, although it is not clear whether increased N content leads to improved conductivity. In one study, Mousavi et al. used theoretical simulations to study the relationship between N content and N-doped graphene conductivity. They reported that the electronic conductivity of graphene increased with increased N dopant concentrations after low-temperature processing, but decreased at higher temperatures. Despite the apparent conflict between the two, it is clear that nitrogen doping is a powerful way to modify the intrinsic properties of CNTs.

Graphene doping can increase the electrical conductivity of graphene by increasing the number of free charge carriers in the graphene material. This is possible because the dopant introduces additional states into the density of states of the material. The shifted Fermi level allows more electrons to enter and exit the material, thereby promoting electrical conductivity. The more dopants added to graphene, the more the Fermi level shifts.

MW-PECVD process

The process incorporates nitrogen into the defects. The C-N clusters are very stable, and are incorporated into the graphitic lattice over time. This results in a hexagonal defect structure. The formation of nitrogen clusters requires two to four vacancies in the graphitic lattice.

Pyridine-CVD graphene films exhibit a narrow range of sheet resistance. The addition of hydrogen causes a slight decrease in sheet resistance at 1070 degC and an increase at 930 degC. This result is comparable to that of ethanol-CVD graphene.

Graphene contains two kinds of defects. The sp3 hybridization defect is the most intense, while vacancy and boundary defects have a lower intensity.

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